Band structure modulation by carrier doping in random-network carbon nanotube transistors

Shuichi Nakamura; Megumi Ohishi; Masashi Shiraishi; Taishi Takenobu; Yoshihiro Iwasa; Hiromichi Kataura

doi:10.1063/1.2219389

Band structure modulation by carrier doping in random-network carbon nanotube transistors

Shuichi Nakamura, Megumi Ohishi, Masashi Shiraishi, Taishi Takenobu, Yoshihiro Iwasa, Hiromichi Kataura

研究成果: Article › 査読

12 被引用数 (Scopus)

抄録

We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.

本文言語	English
論文番号	013112
ジャーナル	Applied Physics Letters
巻	89
号	1
DOI	https://doi.org/10.1063/1.2219389
出版ステータス	Published - 2006
外部発表	はい

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.2219389

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引用スタイル

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AU - Kataura, Hiromichi

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