Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films

Hiromitsu Kato, Norihide Kashio, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

研究成果: Article査読

72 被引用数 (Scopus)

抄録

The photoluminescence (PL) in the hydrogenated samples of amorphous silicon oxynitride and silicon nitride films with different nitrogen contents was investigated. The PL of the two materials showed many similarities indicating the same chemical structure, viz. Si-N bonds, and similar band-tail states. The PL decay process indicated that the recombination between localized band-tail states consisted of excitonlike and radiative tunneling recombination processes. Increase in the abundance ratio of nitrogen+oxygen or that of nitrogen resulted in a wider PL spectrum with higher peak energy.

本文言語English
ページ(範囲)239-244
ページ数6
ジャーナルJournal of Applied Physics
93
1
DOI
出版ステータスPublished - 2003 1 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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