TY - JOUR
T1 - Be and Mg co-doping in GaN
AU - Kawaharazuka, A.
AU - Tanimoto, T.
AU - Nagai, K.
AU - Tanaka, Y.
AU - Horikoshi, Y.
PY - 2007/4
Y1 - 2007/4
N2 - We investigate co-doping of Be and Mg in GaN by molecular beam epitaxy with radio frequency plasma for nitrogen source. The compressive strain accumulated during the growth due to high doping of Be, which has shorter bond length than that of Ga, is compensated for by adding Mg, since its bond length is longer than that of Ga. Photoluminescence spectra reveal that both Be and Mg atoms are mainly incorporated in Ga sites and act as acceptors. The energy shift of the donor-acceptor pair emission associated with Be suggests possible correlation between co-doped Be and Mg acceptors.
AB - We investigate co-doping of Be and Mg in GaN by molecular beam epitaxy with radio frequency plasma for nitrogen source. The compressive strain accumulated during the growth due to high doping of Be, which has shorter bond length than that of Ga, is compensated for by adding Mg, since its bond length is longer than that of Ga. Photoluminescence spectra reveal that both Be and Mg atoms are mainly incorporated in Ga sites and act as acceptors. The energy shift of the donor-acceptor pair emission associated with Be suggests possible correlation between co-doped Be and Mg acceptors.
KW - A1. Defects
KW - A1. Doping
KW - A1. X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/j.jcrysgro.2006.11.109
DO - 10.1016/j.jcrysgro.2006.11.109
M3 - Article
AN - SCOPUS:33947424411
VL - 301-302
SP - 414
EP - 416
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS.
ER -