Be and Mg co-doping in GaN

A. Kawaharazuka*, T. Tanimoto, K. Nagai, Y. Tanaka, Y. Horikoshi

*この研究の対応する著者

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We investigate co-doping of Be and Mg in GaN by molecular beam epitaxy with radio frequency plasma for nitrogen source. The compressive strain accumulated during the growth due to high doping of Be, which has shorter bond length than that of Ga, is compensated for by adding Mg, since its bond length is longer than that of Ga. Photoluminescence spectra reveal that both Be and Mg atoms are mainly incorporated in Ga sites and act as acceptors. The energy shift of the donor-acceptor pair emission associated with Be suggests possible correlation between co-doped Be and Mg acceptors.

本文言語English
ページ(範囲)414-416
ページ数3
ジャーナルJournal of Crystal Growth
301-302
SPEC. ISS.
DOI
出版ステータスPublished - 2007 4月

ASJC Scopus subject areas

  • 凝縮系物理学

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