Be and Mg co-doping in GaN

A. Kawaharazuka, T. Tanimoto, K. Nagai, Y. Tanaka, Y. Horikoshi

研究成果: Article

5 引用 (Scopus)

抄録

We investigate co-doping of Be and Mg in GaN by molecular beam epitaxy with radio frequency plasma for nitrogen source. The compressive strain accumulated during the growth due to high doping of Be, which has shorter bond length than that of Ga, is compensated for by adding Mg, since its bond length is longer than that of Ga. Photoluminescence spectra reveal that both Be and Mg atoms are mainly incorporated in Ga sites and act as acceptors. The energy shift of the donor-acceptor pair emission associated with Be suggests possible correlation between co-doped Be and Mg acceptors.

元の言語English
ページ(範囲)414-416
ページ数3
ジャーナルJournal of Crystal Growth
301-302
発行部数SPEC. ISS.
DOI
出版物ステータスPublished - 2007 4

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Bond length
Doping (additives)
Molecular beam epitaxy
radio frequencies
Photoluminescence
Nitrogen
molecular beam epitaxy
photoluminescence
Plasmas
nitrogen
Atoms
shift
atoms
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

Kawaharazuka, A., Tanimoto, T., Nagai, K., Tanaka, Y., & Horikoshi, Y. (2007). Be and Mg co-doping in GaN. Journal of Crystal Growth, 301-302(SPEC. ISS.), 414-416. https://doi.org/10.1016/j.jcrysgro.2006.11.109

Be and Mg co-doping in GaN. / Kawaharazuka, A.; Tanimoto, T.; Nagai, K.; Tanaka, Y.; Horikoshi, Y.

:: Journal of Crystal Growth, 巻 301-302, 番号 SPEC. ISS., 04.2007, p. 414-416.

研究成果: Article

Kawaharazuka, A, Tanimoto, T, Nagai, K, Tanaka, Y & Horikoshi, Y 2007, 'Be and Mg co-doping in GaN', Journal of Crystal Growth, 巻. 301-302, 番号 SPEC. ISS., pp. 414-416. https://doi.org/10.1016/j.jcrysgro.2006.11.109
Kawaharazuka A, Tanimoto T, Nagai K, Tanaka Y, Horikoshi Y. Be and Mg co-doping in GaN. Journal of Crystal Growth. 2007 4;301-302(SPEC. ISS.):414-416. https://doi.org/10.1016/j.jcrysgro.2006.11.109
Kawaharazuka, A. ; Tanimoto, T. ; Nagai, K. ; Tanaka, Y. ; Horikoshi, Y. / Be and Mg co-doping in GaN. :: Journal of Crystal Growth. 2007 ; 巻 301-302, 番号 SPEC. ISS. pp. 414-416.
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AB - We investigate co-doping of Be and Mg in GaN by molecular beam epitaxy with radio frequency plasma for nitrogen source. The compressive strain accumulated during the growth due to high doping of Be, which has shorter bond length than that of Ga, is compensated for by adding Mg, since its bond length is longer than that of Ga. Photoluminescence spectra reveal that both Be and Mg atoms are mainly incorporated in Ga sites and act as acceptors. The energy shift of the donor-acceptor pair emission associated with Be suggests possible correlation between co-doped Be and Mg acceptors.

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KW - A1. Doping

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

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