Behavior of Cu-In-Te electrodeposition from acid solution

Takahiro Ishizaki, Nagahiro Saito, Daisuke Yata, Akio Fuwa

    研究成果: Conference contribution

    2 引用 (Scopus)

    抜粋

    Ternary compound-semiconductor, CuInTe2, film was deposited cathodically under potentiostatic conditions on titanium substrate from aqueous solution containing CuCl2, InCl3, TeO2 and HCl in this study. The deposition parameters such as electrolytic solution composition, potential and temperature were optimized for electrodeposition of CuInTe2. Structural characterization of the deposited film was also carried out using XRD and SEM. Electrodeposited films were prepared and analyzed for their chemical composition using ICP. The ICP analyses showed that the stoichiometry of the films could be controlled by (1) the deposition potential and/or by (2) the electrolytic bath composition.

    元の言語English
    ホスト出版物のタイトルProceedings of the Second International Conference on Processing Materials for Properties
    編集者B. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
    ページ281-284
    ページ数4
    出版物ステータスPublished - 2000
    イベントProceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA
    継続期間: 2000 11 52000 11 8

    Other

    OtherProceedings of the Second International Conference on Processing Materials for Properties
    San Francisco, CA
    期間00/11/500/11/8

    ASJC Scopus subject areas

    • Engineering(all)

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  • これを引用

    Ishizaki, T., Saito, N., Yata, D., & Fuwa, A. (2000). Behavior of Cu-In-Te electrodeposition from acid solution. : B. Mishra, C. Yamauchi, B. Mishra, & C. Yamauchi (版), Proceedings of the Second International Conference on Processing Materials for Properties (pp. 281-284)