Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

Iwao Ohdomari*, Toyohiro Chikyow, Hiroshi Kawarada, Kazuo Konuma, Masakazu Kakumu, Kazuhiko Hashimoto, Itsuro Kimura, Kenji Yoneda

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The behavior of ion implanted As atoms during MoSi2 formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi2/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substrate were found to redistribute toward the MoSi2/Si interface, but not into the underlying Si. The reason for no enhanced diffusion of As during MoSi2 formation has been discussed in terms of point defects which are not likely to be generated for the silicides in which Si is the dominant diffusing species.

本文言語English
ページ(範囲)3073-3076
ページ数4
ジャーナルJournal of Applied Physics
59
9
DOI
出版ステータスPublished - 1986 12 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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