Beryllium implantation induced deep level defects in p-type 6h-silicon carbide

X. D. Chen, C. C. Ling, S. Fung, C. D. Beling, M. Gong, T. Henkel, H. Tanoue, Naoto Kobayashi

研究成果: Article

6 引用 (Scopus)

抜粋

Beryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.

元の言語English
ページ(範囲)3117-3119
ページ数3
ジャーナルJournal of Applied Physics
93
発行部数5
DOI
出版物ステータスPublished - 2003 3 1
外部発表Yes

    フィンガープリント

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

これを引用

Chen, X. D., Ling, C. C., Fung, S., Beling, C. D., Gong, M., Henkel, T., Tanoue, H., & Kobayashi, N. (2003). Beryllium implantation induced deep level defects in p-type 6h-silicon carbide. Journal of Applied Physics, 93(5), 3117-3119. https://doi.org/10.1063/1.1542687