BGaN micro-islands as novel buffers for GaN hetero-epitaxy

Tetsuya Akasaka*, Toshiki Makimoto

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

BxGa1-xN (x ∼ 0.02) micro-islands provide novel buffers for growing GaN films and AlGaN/GaN heterostructures on sapphire substrates. These films and heterostructures show low threading dislocation density (TDD), low residual carrier concentration, and high two-dimensional electron gas (2DEG) mobility: Non-doped GaN films had the TDD of 2 × 108 cm-2 and the residual electron concentration of 9.4 × 109 cm-3 at 433 K. AlGaN/GaN heterostructures exhibited 2DEG Hall mobility of 1720 and 13100 cm2 V-1 s-1 at 300 and 77 K, respectively. An almost constant sheet electron density (2.9-4.2 × 1012 cm-2) was obtained in the wide temperature range from 500 to 77 K, indicating the absence of parallel conduction in the GaN buffer layers.

本文言語English
ページ(範囲)L1506-L1508
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
50-52
DOI
出版ステータスPublished - 2005 12月 16
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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