Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification

Hiroshi Uchida*, Ken Nishida, Minoru Osada, [No Value] Funakubo, Seiichiro Koda

*この研究の対応する著者

研究成果: Conference contribution

抄録

Thin films of Bi-based perovskite ferroelectrics BiFeO 3 is recently recognized as strong candidates for alternatives to toxic Pb-based ferroelectrics such as conventional Pb(Zr,Ti)O 3. Authors fabricated BiFeO 3 thin films with excellent performance of ferroelectric polarization by ion modification based on sol-gel technique. Some rare-earth ions, such as La 3+ or Nd 3+, could be substituted for Bi 3+ ion in BFO crystal in order to reduce ionic defects in crystal lattices. Electrical resistivity of BiFeO 3 films were improved by ion modification of rare-earth elements, as well as other Bi-based ferroelectric films like Bi 4Ti 3O 12. Although crystal anisotropy and phase-transition temperature (Curie temperature) of these materials are generally reduced by the ion modification, it yield fully-saturated polarization (P) - electrical field (E) property to produce enhanced remanent polarization of approximately 50 μC/cm 2 comparable or superior to conventional Pb(Zr,Ti)O 3 films. We concluded that the ion modification using rare-earth elements could suppress the ionic defects that caused electrical conduction in BiFeO 3 films.

本文言語English
ホスト出版物のタイトルIEEE International Symposium on Applications of Ferroelectrics
ページ138-141
ページ数4
DOI
出版ステータスPublished - 2007
外部発表はい
イベント2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
継続期間: 2007 5月 272007 5月 31

Other

Other2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
国/地域Japan
CityNara-city
Period07/5/2707/5/31

ASJC Scopus subject areas

  • 工学(全般)
  • 材料科学(全般)

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