抄録
Thin films of Bi-based perovskite ferroelectrics BiFeO 3 is recently recognized as strong candidates for alternatives to toxic Pb-based ferroelectrics such as conventional Pb(Zr,Ti)O 3. Authors fabricated BiFeO 3 thin films with excellent performance of ferroelectric polarization by ion modification based on sol-gel technique. Some rare-earth ions, such as La 3+ or Nd 3+, could be substituted for Bi 3+ ion in BFO crystal in order to reduce ionic defects in crystal lattices. Electrical resistivity of BiFeO 3 films were improved by ion modification of rare-earth elements, as well as other Bi-based ferroelectric films like Bi 4Ti 3O 12. Although crystal anisotropy and phase-transition temperature (Curie temperature) of these materials are generally reduced by the ion modification, it yield fully-saturated polarization (P) - electrical field (E) property to produce enhanced remanent polarization of approximately 50 μC/cm 2 comparable or superior to conventional Pb(Zr,Ti)O 3 films. We concluded that the ion modification using rare-earth elements could suppress the ionic defects that caused electrical conduction in BiFeO 3 films.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | IEEE International Symposium on Applications of Ferroelectrics |
| ページ | 138-141 |
| ページ数 | 4 |
| DOI | |
| 出版物ステータス | Published - 2007 |
| 外部発表 | Yes |
| イベント | 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan 継続期間: 2007 5 27 → 2007 5 31 |
Other
| Other | 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF |
|---|---|
| 国 | Japan |
| 市 | Nara-city |
| 期間 | 07/5/27 → 07/5/31 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)
これを引用
Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification. / Uchida, Hiroshi; Nishida, Ken; Osada, Minoru; Funakubo, [No Value]; Koda, Seiichiro.
IEEE International Symposium on Applications of Ferroelectrics. 2007. p. 138-141 4393194.研究成果: Conference contribution
}
TY - GEN
T1 - Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification
AU - Uchida, Hiroshi
AU - Nishida, Ken
AU - Osada, Minoru
AU - Funakubo, [No Value]
AU - Koda, Seiichiro
PY - 2007
Y1 - 2007
N2 - Thin films of Bi-based perovskite ferroelectrics BiFeO 3 is recently recognized as strong candidates for alternatives to toxic Pb-based ferroelectrics such as conventional Pb(Zr,Ti)O 3. Authors fabricated BiFeO 3 thin films with excellent performance of ferroelectric polarization by ion modification based on sol-gel technique. Some rare-earth ions, such as La 3+ or Nd 3+, could be substituted for Bi 3+ ion in BFO crystal in order to reduce ionic defects in crystal lattices. Electrical resistivity of BiFeO 3 films were improved by ion modification of rare-earth elements, as well as other Bi-based ferroelectric films like Bi 4Ti 3O 12. Although crystal anisotropy and phase-transition temperature (Curie temperature) of these materials are generally reduced by the ion modification, it yield fully-saturated polarization (P) - electrical field (E) property to produce enhanced remanent polarization of approximately 50 μC/cm 2 comparable or superior to conventional Pb(Zr,Ti)O 3 films. We concluded that the ion modification using rare-earth elements could suppress the ionic defects that caused electrical conduction in BiFeO 3 films.
AB - Thin films of Bi-based perovskite ferroelectrics BiFeO 3 is recently recognized as strong candidates for alternatives to toxic Pb-based ferroelectrics such as conventional Pb(Zr,Ti)O 3. Authors fabricated BiFeO 3 thin films with excellent performance of ferroelectric polarization by ion modification based on sol-gel technique. Some rare-earth ions, such as La 3+ or Nd 3+, could be substituted for Bi 3+ ion in BFO crystal in order to reduce ionic defects in crystal lattices. Electrical resistivity of BiFeO 3 films were improved by ion modification of rare-earth elements, as well as other Bi-based ferroelectric films like Bi 4Ti 3O 12. Although crystal anisotropy and phase-transition temperature (Curie temperature) of these materials are generally reduced by the ion modification, it yield fully-saturated polarization (P) - electrical field (E) property to produce enhanced remanent polarization of approximately 50 μC/cm 2 comparable or superior to conventional Pb(Zr,Ti)O 3 films. We concluded that the ion modification using rare-earth elements could suppress the ionic defects that caused electrical conduction in BiFeO 3 films.
UR - http://www.scopus.com/inward/record.url?scp=51349086480&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51349086480&partnerID=8YFLogxK
U2 - 10.1109/ISAF.2007.4393194
DO - 10.1109/ISAF.2007.4393194
M3 - Conference contribution
AN - SCOPUS:51349086480
SN - 1424413338
SN - 9781424413331
SP - 138
EP - 141
BT - IEEE International Symposium on Applications of Ferroelectrics
ER -