Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n+-GaAs Esaki diode

M. Kohda; T. Kita; Y. Ohno; F. Matsukura; H. Ohno

doi:10.1063/1.2219141

Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n⁺-GaAs Esaki diode

M. Kohda^*, T. Kita, Y. Ohno, F. Matsukura, H. Ohno

^*この研究の対応する著者

研究成果: Article › 査読

36 被引用数 (Scopus)

抄録

We investigated injection of spin polarized electrons in a (Ga,Mn)As/n ⁺-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (P_EL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum P_EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

本文言語	English
論文番号	012103
ジャーナル	Applied Physics Letters
巻	89
号	1
DOI	https://doi.org/10.1063/1.2219141
出版ステータス	Published - 2006
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.2219141

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引用スタイル

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abstract = "We investigated injection of spin polarized electrons in a (Ga,Mn)As/n +-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.",

author = "M. Kohda and T. Kita and Y. Ohno and F. Matsukura and H. Ohno",

note = "Funding Information: The authors would like to acknowledge T. Dietl, K. Ohtani, H. Sanada, and D. Chiba for valuable discussions. This work was partly supported by Grant-in-Aids from JSPS and MEXT. ",

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T1 - Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n+-GaAs Esaki diode

AU - Kohda, M.

AU - Kita, T.

AU - Ohno, Y.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The authors would like to acknowledge T. Dietl, K. Ohtani, H. Sanada, and D. Chiba for valuable discussions. This work was partly supported by Grant-in-Aids from JSPS and MEXT.

PY - 2006

Y1 - 2006

N2 - We investigated injection of spin polarized electrons in a (Ga,Mn)As/n +-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

AB - We investigated injection of spin polarized electrons in a (Ga,Mn)As/n +-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

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