Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n+-GaAs Esaki diode

M. Kohda, T. Kita, Y. Ohno, F. Matsukura, H. Ohno

研究成果: Article査読

36 被引用数 (Scopus)

抄録

We investigated injection of spin polarized electrons in a (Ga,Mn)As/n +-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

本文言語English
論文番号012103
ジャーナルApplied Physics Letters
89
1
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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