Biaxial stress evaluation in SiGe epitaxially grown on Ge substrate by oil-immersion raman spectroscopy

K. Takeuchi, D. Kosemura, S. Yamamoto, M. Tomita, K. Usuda, N. Sawamoto, A. Ogura

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

Anisotropic biaxial stress states in the high-Ge concentration Si1-xGex/Ge nanostructures were evaluated by oil-immersion Raman spectroscopy. Phonon deformation potentials (PDPs) are indispensable to convert the Raman frequency shift to stress in the Si1-xGex. Therefore, we investigated the accurate PDPs (p and q) of the Si1-xGex with the high Ge concentration by oil-immersion Raman spectroscopy. Using the derived PDPs, the clear uniaxial stress relaxation in the strained Si1-xGex nanostructure was observed.

本文言語English
ホスト出版物のタイトルULSI Process Integration 9
編集者C. Claeys, J. Murota, M. Tao, H. Iwai, S. Deleonibus
出版社Electrochemical Society Inc.
ページ81-87
ページ数7
10
ISBN(電子版)9781607685395
DOI
出版ステータスPublished - 2015
外部発表はい
イベントSymposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States
継続期間: 2015 10月 112015 10月 15

出版物シリーズ

名前ECS Transactions
番号10
69
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Other

OtherSymposium on ULSI Process Integration 9 - 228th ECS Meeting
国/地域United States
CityPhoenix
Period15/10/1115/10/15

ASJC Scopus subject areas

  • 工学(全般)

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