Bipolar transistor with a buried layer formed by high-energy ion implantation for subhalf-micron bipolar-complementary metal oxide semiconductor LSIs

Takashi Kuroi, Youji Kawasaki, Yoshiyuki Ishigaki, Yasushi Kinoshita, Masahide Inuishi, Katsuhiro Tsukamoto, Natsuro Tsubouchi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We investigated a bipolar transistor with a buried layer formed by high-energy ion implantation without the epitaxitial silicon layer growth. We focused mainly on the reduction of junction leakage current related to implantation damages, which could be achieved by rapid thermal annealing. Consequently, the maximum current gain of 155 and the cutoff frequency of 17.3 GHz were achieved with BVCE0 —5.0 V. Moreover, this fabrication process is applicable to the conventional complementary metal oxide semiconductor (CMOS) process with the retrograde twin wells without additional process steps. Therefore, this technique can be very promising for the fabrication of subhalf-micron BiCMOS LSIs.

本文言語English
ページ(範囲)541-545
ページ数5
ジャーナルJapanese journal of applied physics
33
1
DOI
出版ステータスPublished - 1994 1 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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