抄録
We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 105 cm-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.
本文言語 | English |
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ページ(範囲) | 287-290 |
ページ数 | 4 |
ジャーナル | Journal of Crystal Growth |
巻 | 127 |
号 | 1-4 |
DOI | |
出版ステータス | Published - 1993 2 2 |
外部発表 | はい |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry