Blue and blue/green laser diodes and LED-based display devices

W. Xie*, D. C. Grillo, M. Kobayashi, L. He, R. L. Gunshor, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, N. Otsuka

*この研究の対応する著者

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 105 cm-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.

本文言語English
ページ(範囲)287-290
ページ数4
ジャーナルJournal of Crystal Growth
127
1-4
DOI
出版ステータスPublished - 1993 2 2
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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