Blue and blue/green laser diodes and LED-based display devices

W. Xie; D. C. Grillo; M. Kobayashi; L. He; R. L. Gunshor; H. Jeon; J. Ding; A. V. Nurmikko; G. C. Hua; N. Otsuka

doi:10.1016/0022-0248(93)90623-5

Blue and blue/green laser diodes and LED-based display devices

W. Xie^*, D. C. Grillo, M. Kobayashi, L. He, R. L. Gunshor, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, N. Otsuka

^*この研究の対応する著者

研究成果: Article › 査読

8 被引用数 (Scopus)

抄録

We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 10⁵ cm^-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.

本文言語	English
ページ（範囲）	287-290
ページ数	4
ジャーナル	Journal of Crystal Growth
巻	127
号	1-4
DOI	https://doi.org/10.1016/0022-0248(93)90623-5
出版ステータス	Published - 1993 2月 2
外部発表	はい

ASJC Scopus subject areas

凝縮系物理学
無機化学
材料化学

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10.1016/0022-0248(93)90623-5

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引用スタイル

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title = "Blue and blue/green laser diodes and LED-based display devices",

abstract = "We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 105 cm-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.",

author = "W. Xie and Grillo, {D. C.} and M. Kobayashi and L. He and Gunshor, {R. L.} and H. Jeon and J. Ding and Nurmikko, {A. V.} and Hua, {G. C.} and N. Otsuka",

note = "Funding Information: The research was supported by the DARPA/ONR University Research Initiative, the Air Force Office of Scientific Research, and the National Science Foundation/MRG.",

year = "1993",

month = feb,

day = "2",

doi = "10.1016/0022-0248(93)90623-5",

language = "English",

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T1 - Blue and blue/green laser diodes and LED-based display devices

AU - Xie, W.

AU - Grillo, D. C.

AU - Kobayashi, M.

AU - He, L.

AU - Gunshor, R. L.

AU - Jeon, H.

AU - Ding, J.

AU - Nurmikko, A. V.

AU - Hua, G. C.

AU - Otsuka, N.

N1 - Funding Information: The research was supported by the DARPA/ONR University Research Initiative, the Air Force Office of Scientific Research, and the National Science Foundation/MRG.

PY - 1993/2/2

Y1 - 1993/2/2

N2 - We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 105 cm-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.

AB - We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 105 cm-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

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ER -

Blue and blue/green laser diodes and LED-based display devices

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