Blue and blue/green laser diodes and LED-based display devices

W. Xie; D. C. Grillo; M. Kobayashi; L. He; R. L. Gunshor; H. Jeon; J. Ding; A. V. Nurmikko; G. C. Hua; N. Otsuka

doi:10.1016/0022-0248(93)90623-5

Blue and blue/green laser diodes and LED-based display devices

W. Xie, D. C. Grillo, M. Kobayashi, L. He, R. L. Gunshor, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, N. Otsuka

研究成果: Article › 査読

8 被引用数 (Scopus)

抄録

We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 10⁵ cm^-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.

本文言語	English
ページ（範囲）	287-290
ページ数	4
ジャーナル	Journal of Crystal Growth
巻	127
号	1-4
DOI	https://doi.org/10.1016/0022-0248(93)90623-5
出版ステータス	Published - 1993 2 2
外部発表	はい

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

文献へのアクセス

10.1016/0022-0248(93)90623-5

他のファイルとリンク

フィンガープリント「Blue and blue/green laser diodes and LED-based display devices」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{daaba123eff147d1bdc4968cd42dca3f,

title = "Blue and blue/green laser diodes and LED-based display devices",

abstract = "We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 105 cm-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.",

author = "W. Xie and Grillo, {D. C.} and M. Kobayashi and L. He and Gunshor, {R. L.} and H. Jeon and J. Ding and Nurmikko, {A. V.} and Hua, {G. C.} and N. Otsuka",

note = "Funding Information: The research was supported by the DARPA/ONR University Research Initiative, the Air Force Office of Scientific Research, and the National Science Foundation/MRG. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1993",

month = feb,

day = "2",

doi = "10.1016/0022-0248(93)90623-5",

language = "English",

volume = "127",

pages = "287--290",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Blue and blue/green laser diodes and LED-based display devices

AU - Xie, W.

AU - Grillo, D. C.

AU - Kobayashi, M.

AU - He, L.

AU - Gunshor, R. L.

AU - Jeon, H.

AU - Ding, J.

AU - Nurmikko, A. V.

AU - Hua, G. C.

AU - Otsuka, N.

N1 - Funding Information: The research was supported by the DARPA/ONR University Research Initiative, the Air Force Office of Scientific Research, and the National Science Foundation/MRG. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1993/2/2

Y1 - 1993/2/2

N2 - We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 105 cm-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.

AB - We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 105 cm-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=0027904605&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027904605&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(93)90623-5

DO - 10.1016/0022-0248(93)90623-5

M3 - Article

AN - SCOPUS:0027904605

VL - 127

SP - 287

EP - 290

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -