Blue and green diode lasers in ZnSe-based quantum wells

H. Jeon; J. Ding; A. V. Nurmikko; W. Xie; D. C. Grillo; M. Kobayashi; R. L. Gunshor; G. C. Hua; N. Otsuka

doi:10.1063/1.107109

Blue and green diode lasers in ZnSe-based quantum wells

H. Jeon, J. Ding, A. V. Nurmikko, W. Xie, D. C. Grillo, M. Kobayashi, R. L. Gunshor, G. C. Hua, N. Otsuka

研究成果: Article

153 被引用数 (Scopus)

抄録

Laser diode operation has been obtained from (Zn,Cd)Se/ZnSe and (Zn,Cd)Se/Zn(S,Se) quantum well structures in the blue and the green. The devices, prepared on p- and n-type (In,Ga)As or GaAs buffer layers for lattice matching purposes to control the defect density, have been operated at near-room-temperature conditions and briefly at room temperature with uncoated end facets. Quasi-continuous wave operation has been obtained at T=77 K.

本文言語	English
ページ（範囲）	2045-2047
ページ数	3
ジャーナル	Applied Physics Letters
巻	60
号	17
DOI	https://doi.org/10.1063/1.107109
出版ステータス	Published - 1992 12 1
外部発表	はい

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.107109

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引用スタイル

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AU - Ding, J.

AU - Nurmikko, A. V.

AU - Xie, W.

AU - Grillo, D. C.

AU - Kobayashi, M.

AU - Gunshor, R. L.

AU - Hua, G. C.

AU - Otsuka, N.

PY - 1992/12/1

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AB - Laser diode operation has been obtained from (Zn,Cd)Se/ZnSe and (Zn,Cd)Se/Zn(S,Se) quantum well structures in the blue and the green. The devices, prepared on p- and n-type (In,Ga)As or GaAs buffer layers for lattice matching purposes to control the defect density, have been operated at near-room-temperature conditions and briefly at room temperature with uncoated end facets. Quasi-continuous wave operation has been obtained at T=77 K.

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