抄録
Laser diode operation has been obtained from (Zn,Cd)Se/ZnSe and (Zn,Cd)Se/Zn(S,Se) quantum well structures in the blue and the green. The devices, prepared on p- and n-type (In,Ga)As or GaAs buffer layers for lattice matching purposes to control the defect density, have been operated at near-room-temperature conditions and briefly at room temperature with uncoated end facets. Quasi-continuous wave operation has been obtained at T=77 K.
本文言語 | English |
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ページ(範囲) | 2045-2047 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 60 |
号 | 17 |
DOI | |
出版ステータス | Published - 1992 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)