Blue and green diode lasers in ZnSe-based quantum wells

H. Jeon; J. Ding; A. V. Nurmikko; W. Xie; D. C. Grillo; M. Kobayashi; R. L. Gunshor; G. C. Hua; N. Otsuka

doi:10.1063/1.107109

Blue and green diode lasers in ZnSe-based quantum wells

H. Jeon^*, J. Ding, A. V. Nurmikko, W. Xie, D. C. Grillo, M. Kobayashi, R. L. Gunshor, G. C. Hua, N. Otsuka

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研究成果: Article › 査読

157 被引用数 (Scopus)

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Laser diode operation has been obtained from (Zn,Cd)Se/ZnSe and (Zn,Cd)Se/Zn(S,Se) quantum well structures in the blue and the green. The devices, prepared on p- and n-type (In,Ga)As or GaAs buffer layers for lattice matching purposes to control the defect density, have been operated at near-room-temperature conditions and briefly at room temperature with uncoated end facets. Quasi-continuous wave operation has been obtained at T=77 K.

本文言語	English
ページ（範囲）	2045-2047
ページ数	3
ジャーナル	Applied Physics Letters
巻	60
号	17
DOI	https://doi.org/10.1063/1.107109
出版ステータス	Published - 1992
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.107109

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@article{9a834b9cc56f41318412a06fcb13946a,

title = "Blue and green diode lasers in ZnSe-based quantum wells",

abstract = "Laser diode operation has been obtained from (Zn,Cd)Se/ZnSe and (Zn,Cd)Se/Zn(S,Se) quantum well structures in the blue and the green. The devices, prepared on p- and n-type (In,Ga)As or GaAs buffer layers for lattice matching purposes to control the defect density, have been operated at near-room-temperature conditions and briefly at room temperature with uncoated end facets. Quasi-continuous wave operation has been obtained at T=77 K.",

author = "H. Jeon and J. Ding and Nurmikko, {A. V.} and W. Xie and Grillo, {D. C.} and M. Kobayashi and Gunshor, {R. L.} and Hua, {G. C.} and N. Otsuka",

year = "1992",

doi = "10.1063/1.107109",

language = "English",

volume = "60",

pages = "2045--2047",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Blue and green diode lasers in ZnSe-based quantum wells

AU - Jeon, H.

AU - Ding, J.

AU - Nurmikko, A. V.

AU - Xie, W.

AU - Grillo, D. C.

AU - Kobayashi, M.

AU - Gunshor, R. L.

AU - Hua, G. C.

AU - Otsuka, N.

PY - 1992

Y1 - 1992

N2 - Laser diode operation has been obtained from (Zn,Cd)Se/ZnSe and (Zn,Cd)Se/Zn(S,Se) quantum well structures in the blue and the green. The devices, prepared on p- and n-type (In,Ga)As or GaAs buffer layers for lattice matching purposes to control the defect density, have been operated at near-room-temperature conditions and briefly at room temperature with uncoated end facets. Quasi-continuous wave operation has been obtained at T=77 K.

AB - Laser diode operation has been obtained from (Zn,Cd)Se/ZnSe and (Zn,Cd)Se/Zn(S,Se) quantum well structures in the blue and the green. The devices, prepared on p- and n-type (In,Ga)As or GaAs buffer layers for lattice matching purposes to control the defect density, have been operated at near-room-temperature conditions and briefly at room temperature with uncoated end facets. Quasi-continuous wave operation has been obtained at T=77 K.

UR - http://www.scopus.com/inward/record.url?scp=21544434141&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544434141&partnerID=8YFLogxK

U2 - 10.1063/1.107109

DO - 10.1063/1.107109

M3 - Article

AN - SCOPUS:21544434141

VL - 60

SP - 2045

EP - 2047

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -

Blue and green diode lasers in ZnSe-based quantum wells

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