Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

H. Jeon; J. Ding; W. Patterson; A. V. Nurmikko; W. Xie; D. C. Grillo; M. Kobayashi; R. L. Gunshor

doi:10.1063/1.105625

Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

H. Jeon^*, J. Ding, W. Patterson, A. V. Nurmikko, W. Xie, D. C. Grillo, M. Kobayashi, R. L. Gunshor

^*この研究の対応する著者

研究成果: Article › 査読

519 被引用数 (Scopus)

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Laser diode action in the blue-green has been observed from (Zn,Cd)Se quantum wells within ZnSe/Zn(S,Se) p-n heterojunctions up to 250 K. Operation is reported for two different configurations for which the GaAs substrate serves either as the n- or p-type injecting contact. In pulsed operation, output powers exceeding 0.6 W have been measured in devices prepared on both n-type and p-type GaAs epitaxial buffer layers and substrates.

本文言語	English
ページ（範囲）	3619-3621
ページ数	3
ジャーナル	Applied Physics Letters
巻	59
号	27
DOI	https://doi.org/10.1063/1.105625
出版ステータス	Published - 1991
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.105625

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abstract = "Laser diode action in the blue-green has been observed from (Zn,Cd)Se quantum wells within ZnSe/Zn(S,Se) p-n heterojunctions up to 250 K. Operation is reported for two different configurations for which the GaAs substrate serves either as the n- or p-type injecting contact. In pulsed operation, output powers exceeding 0.6 W have been measured in devices prepared on both n-type and p-type GaAs epitaxial buffer layers and substrates.",

author = "H. Jeon and J. Ding and W. Patterson and Nurmikko, {A. V.} and W. Xie and Grillo, {D. C.} and M. Kobayashi and Gunshor, {R. L.}",

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doi = "10.1063/1.105625",

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T1 - Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

AU - Jeon, H.

AU - Ding, J.

AU - Patterson, W.

AU - Nurmikko, A. V.

AU - Xie, W.

AU - Grillo, D. C.

AU - Kobayashi, M.

AU - Gunshor, R. L.

PY - 1991

Y1 - 1991

N2 - Laser diode action in the blue-green has been observed from (Zn,Cd)Se quantum wells within ZnSe/Zn(S,Se) p-n heterojunctions up to 250 K. Operation is reported for two different configurations for which the GaAs substrate serves either as the n- or p-type injecting contact. In pulsed operation, output powers exceeding 0.6 W have been measured in devices prepared on both n-type and p-type GaAs epitaxial buffer layers and substrates.

AB - Laser diode action in the blue-green has been observed from (Zn,Cd)Se quantum wells within ZnSe/Zn(S,Se) p-n heterojunctions up to 250 K. Operation is reported for two different configurations for which the GaAs substrate serves either as the n- or p-type injecting contact. In pulsed operation, output powers exceeding 0.6 W have been measured in devices prepared on both n-type and p-type GaAs epitaxial buffer layers and substrates.

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

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