抄録
Laser diode action in the blue-green has been observed from (Zn,Cd)Se quantum wells within ZnSe/Zn(S,Se) p-n heterojunctions up to 250 K. Operation is reported for two different configurations for which the GaAs substrate serves either as the n- or p-type injecting contact. In pulsed operation, output powers exceeding 0.6 W have been measured in devices prepared on both n-type and p-type GaAs epitaxial buffer layers and substrates.
本文言語 | English |
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ページ(範囲) | 3619-3621 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 59 |
号 | 27 |
DOI | |
出版ステータス | Published - 1991 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)