Blue/green pn junction electroluminescence from ZnSe-based multiple quantum-well structures

W. Xie, D. C. Grillo, R. L. Gunshor, M. Kobayashi, G. C. Hua, N. Otsuka, H. Jeon, J. Ding, A. V. Nurmikko

研究成果: Article査読

59 被引用数 (Scopus)

抄録

The successful p doping of ZnSe by substitutional nitrogen using a plasma cell incorporated into the molecular beam epitaxy chamber has led to the development of electroluminescent devices based on carrier injection at a pn junction. The light emitting diode structures described here are grown on a GaAs substrate using a tetragonally distorted (In,Ga)As buffer layer to provide lattice matching between the substrate and the active II-VI region. The result of the incorporation of the buffer layer is an essentially dislocation-free active region. The letter discusses optical properties as well as the x-ray and transmission electron microscopy characterization of the quantum well device structures.

本文言語English
ページ(範囲)463-465
ページ数3
ジャーナルApplied Physics Letters
60
4
DOI
出版ステータスPublished - 1992
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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