In this work, strong low-temperature bonding of silicon and crystalline quartz wafers, effecting in mechanical strength, which is close to initial materials has been described. High bonding strength is associated with minimization of the residual stresses, optimization of surface activation, and application of an electric field during annealing. The bonding has a wide application field because both, silicon and crystalline quartz are key materials for many devices including generators, high frequency filters, gyroscopes, microbalances of high stability, etc.
|寄稿の翻訳タイトル||Bonding of silicon and crystal quartz wafers at the minimized residual stresses|
|出版ステータス||Published - 2011|
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