We present a novel fabrication procedure for high-k dielectric nanofilms by using of titania nanosheet as a building block. Layer-by-layer assembly of titania nanosheets with the use of the atomically flat SrRuO3 substrate is advantageous as a means of the fabrication for atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure corresponding to the layer-by-layer assembly, and the film-substrate interface is atomically flat without interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thickness down to 10 nm. These results, as well as the simple, low-cost and low-temperature features of the layer-by-layer assembly, our approach provides a rational design and construction of high-k devices.
|ホスト出版物のタイトル||5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009|
|出版ステータス||Published - 2009|
|イベント||5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009 - Denver, CO, United States|
継続期間: 2009 4月 21 → 2009 4月 23
|Other||5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009|
|Period||09/4/21 → 09/4/23|
ASJC Scopus subject areas