Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block

Minoru Osada, Takayoshi Sasaki

研究成果: Conference contribution

抄録

We present a novel fabrication procedure for high-k dielectric nanofilms by using of titania nanosheet as a building block. Layer-by-layer assembly of titania nanosheets with the use of the atomically flat SrRuO3 substrate is advantageous as a means of the fabrication for atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure corresponding to the layer-by-layer assembly, and the film-substrate interface is atomically flat without interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thickness down to 10 nm. These results, as well as the simple, low-cost and low-temperature features of the layer-by-layer assembly, our approach provides a rational design and construction of high-k devices.

本文言語English
ホスト出版物のタイトル5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009
ページ131-136
ページ数6
出版ステータスPublished - 2009
外部発表はい
イベント5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009 - Denver, CO, United States
継続期間: 2009 4 212009 4 23

Other

Other5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009
国/地域United States
CityDenver, CO
Period09/4/2109/4/23

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • セラミックおよび複合材料

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