Boundary Conditions Between Current Mode and Thermal Mode Second Breakdown in Epitaxial Planar Transistors

Keiichi Koyanagi, Kunio Hane, Tokio Suzuki

研究成果: Article

18 引用 (Scopus)

抜粋

The dependence of the increase of current in a transistor of n+-p-n-n+ type on time is investigated, and current mode second breakdown (CSB) and thermal mode second breakdown (TSB) are discriminated by the duration of the delay time before which second breakdown occurs. The boundary conditions between CSB and TSB in steady state are clarified. The critical voltage between CSB and TSB is determined by the width of the n layer, the immobile charge density of the n layer, and the injected electron density from the emitter to the n layer. The numerical analysis was in qualitative agreement with the experimental results.

元の言語English
ページ(範囲)672-678
ページ数7
ジャーナルIEEE Transactions on Electron Devices
24
発行部数6
DOI
出版物ステータスPublished - 1977 6
外部発表Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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