Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method

K. Ishii, T. Morita, D. Isshiki, Y. Ohki

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

For higher integration, higher speed, and smaller power consumption, Amorphous SiO2 thin films have become even more downsized to the submicron scale. One of the best approaches in solving the difficulty of SiO2 deposition at a low temperature and in conformity to the underlayer (in the MOS structure), is to store it in tetraethoxysilane (TEOS). Presented in the paper were the deposition of SiO2 in TEOS using the plasma CVD method and some properties including the dielectric strength.

本文言語English
ホスト出版物のタイトルAnnual Report - Conference on Electrical Insulation and Dielectric Phenomena
編集者 Anon
出版社Publ by IEEE
ページ355-358
ページ数4
ISBN(印刷版)0780309669
出版ステータスPublished - 1993 12 1
イベントProceedings of the 1993 IEEE Conference on Electrical Insulation and Dielectric Phenomena - Pocono Manor, PA, USA
継続期間: 1993 10 171993 10 20

出版物シリーズ

名前Annual Report - Conference on Electrical Insulation and Dielectric Phenomena
ISSN(印刷版)0084-9162

Other

OtherProceedings of the 1993 IEEE Conference on Electrical Insulation and Dielectric Phenomena
CityPocono Manor, PA, USA
Period93/10/1793/10/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Building and Construction

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