抄録
High-resolution Brillouin scattering experiments have been performed for a high-quality free-standing gallium nitride (GaN) substrate. Elastic stiffness constants are reported. A comparison is made with the results of an earlier study for a GaN thin film on sapphire substrate.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 8502-8504 |
| ページ数 | 3 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 85 |
| 号 | 12 |
| DOI | |
| 出版ステータス | Published - 1999 6 15 |
ASJC Scopus subject areas
- 物理学および天文学（全般）