Brillouin scattering study of gallium nitride: Elastic stiffness constants

M. Yamaguchi*, T. Yagi, T. Azuhata, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura

*この研究の対応する著者

研究成果: Article査読

128 被引用数 (Scopus)

抄録

High-resolution Brillouin scattering measurements on a high-quality wurtzite gallium nitride (GaN) single crystal were carried out and elastic stiffness constants were determined. A comparison is given with the results of a recently reported model for calculation of the elastics constants of III-V semiconductors based on the modified version of Keyes's relations. A good agreement is found between the experimental and theoretical elastic constants for GaN.

本文言語English
ページ(範囲)241-248
ページ数8
ジャーナルJournal of Physics Condensed Matter
9
1
DOI
出版ステータスPublished - 1997 1月 6

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

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