抄録
High-resolution Brillouin scattering measurements on a high-quality wurtzite gallium nitride (GaN) single crystal were carried out and elastic stiffness constants were determined. A comparison is given with the results of a recently reported model for calculation of the elastics constants of III-V semiconductors based on the modified version of Keyes's relations. A good agreement is found between the experimental and theoretical elastic constants for GaN.
本文言語 | English |
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ページ(範囲) | 241-248 |
ページ数 | 8 |
ジャーナル | Journal of Physics Condensed Matter |
巻 | 9 |
号 | 1 |
DOI | |
出版ステータス | Published - 1997 1月 6 |
ASJC Scopus subject areas
- 材料科学(全般)
- 凝縮系物理学