抄録
High-resolution Brillouin scattering measurements on a high-quality wurtzite gallium nitride (GaN) single crystal were carried out and elastic stiffness constants were determined. A comparison is given with the results of a recently reported model for calculation of the elastics constants of III-V semiconductors based on the modified version of Keyes's relations. A good agreement is found between the experimental and theoretical elastic constants for GaN.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 241-248 |
| ページ数 | 8 |
| ジャーナル | Journal of Physics Condensed Matter |
| 巻 | 9 |
| 号 | 1 |
| DOI | |
| 出版ステータス | Published - 1997 1 6 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics