Broad-band electroluminescence from highly stacked InAs quantum dot at telecom-band

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We have developed a growth procedure for increasing the number of stacked layers of InAs quantum dots (QDs) on an InP(311)B substrate that is resistant to defects and dislocations. In this work, we also developed a modulated stacking structure consisting of various size QDs for electroluminescence (EL). This promotes broad-band emission because each QD-distributed wide range can emit a different wavelength. The EL spectrum of this sample was measured with pulsed current injection. There was a strong emission from the ground state at approximately 1524 nm which is suitable for fiber-optic communications, with an injection current of 100 mA at room temperature. The full width at half maximum was 213 nm. Modulated stacking using this strain-compensation technique is thus a useful way to expand the gain wavelength.

本文言語English
ホスト出版物のタイトルApplied Mechanics, Fluid and Solid Mechanics
ページ269-273
ページ数5
DOI
出版ステータスPublished - 2014
外部発表はい
イベント2013 International Conference on Applied Mechanics, Fluid and Solid Mechanics, AMFSM 2013 - , Singapore
継続期間: 2013 11 152013 12 16

出版物シリーズ

名前Advanced Materials Research
871
ISSN(印刷版)1022-6680

Other

Other2013 International Conference on Applied Mechanics, Fluid and Solid Mechanics, AMFSM 2013
国/地域Singapore
Period13/11/1513/12/16

ASJC Scopus subject areas

  • 工学(全般)

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