Broadband highly linear high isolation SPDT switch IC with floating body technique in 180-nm CMOS

Xiao Xu, Xin Yang, Taufiq Alif Kurniawan, Toshihiko Yoshimasu

研究成果: Conference contribution

抄録

This paper presents a broadband single-pole double-throw (SPDT) switch IC in a 180-nm CMOS process. Floating body technique and stacked nMOSFETs are utilized to improve the power handling capability and isolation performance. The fabricated SPDT switch IC has exhibited an input referred 0.5-dB compression point of 21.8 dBm, an isolation of 42.4 dB and an insertion loss of 1.2 dB for transmit mode at an operation frequency of 5.0 GHz. The SPDT switch IC has an insertion loss of 2.1 dB and a return loss of 10.6 dB for receive mode at 5.0 GHz.

本文言語English
ホスト出版物のタイトルProceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ページ653-655
ページ数3
ISBN(印刷版)9781479983636
DOI
出版ステータスPublished - 2015 9 30
イベント11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore
継続期間: 2015 6 12015 6 4

Other

Other11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
国/地域Singapore
CitySingapore
Period15/6/115/6/4

ASJC Scopus subject areas

  • 電子工学および電気工学

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