Bulk and surface nucleation processes in Ag2S conductance switches

M. Morales-Masis, S. J. Van Der Molen, T. Hasegawa, J. M. Van Ruitenbeek

研究成果: Article査読

29 被引用数 (Scopus)

抄録

We studied metallic Ag formation inside and on the surface of Ag 2S thin films, induced by the electric field created with a scanning tunnel microscope (STM) tip. Two clear regimes were observed: cluster formation on the surface at low bias voltages, and full conductance switching at higher bias voltages (V>70 mV). The bias voltage at which this transition is observed is in agreement with the known threshold voltage for conductance switching at room temperature. We propose a model for the cluster formation at low bias voltage. Scaling of the measured data with the proposed model indicates that the process takes place near steady state, but depends on the STM tip geometry. The growth of the clusters is confirmed by tip retraction measurements and topography scans. This study provides improved understanding of the physical mechanisms that drive conductance switching in solid electrolyte memristive devices.

本文言語English
論文番号115310
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
84
11
DOI
出版ステータスPublished - 2011 9 19
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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