C 60 field effect transistor with electrodes modified by La@C 82

Nobuya Hiroshiba, Katsumi Tanigaki, Ryotaro Kumashiro, Hirotaka Ohashi, Takatsugu Wakahara, Takeshi Akasaka

研究成果: Article

52 引用 (Scopus)

抜粋

C 60 field effect transistors (FETs) with interfacial modifications of electrodes using endohedral fullerene, C 60/La@C 82-FETs, are reported. An FET operation is observed without any annealing processes even once the fabricated devices are exposed to air, which has not ever seen in the conventional C 60 FETs. Another improvement in the field effect mobilities is also observed with little change in the threshold voltage. The interfacial surface modifications on the electrodes using endohedral fullerene analogues with large number of carriers are effective in reducing the trapping levels at the interface between C 60 thin film surface and the gold electrodes.

元の言語English
ページ(範囲)235-238
ページ数4
ジャーナルChemical Physics Letters
400
発行部数1-3
DOI
出版物ステータスPublished - 2004 12 11
外部発表Yes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

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  • これを引用

    Hiroshiba, N., Tanigaki, K., Kumashiro, R., Ohashi, H., Wakahara, T., & Akasaka, T. (2004). C 60 field effect transistor with electrodes modified by La@C 82 . Chemical Physics Letters, 400(1-3), 235-238. https://doi.org/10.1016/j.cplett.2004.10.070