C 60 field effect transistor with electrodes modified by La@C 82

Nobuya Hiroshiba, Katsumi Tanigaki, Ryotaro Kumashiro, Hirotaka Ohashi, Takatsugu Wakahara, Takeshi Akasaka

研究成果: Article査読

53 被引用数 (Scopus)

抄録

C 60 field effect transistors (FETs) with interfacial modifications of electrodes using endohedral fullerene, C 60/La@C 82-FETs, are reported. An FET operation is observed without any annealing processes even once the fabricated devices are exposed to air, which has not ever seen in the conventional C 60 FETs. Another improvement in the field effect mobilities is also observed with little change in the threshold voltage. The interfacial surface modifications on the electrodes using endohedral fullerene analogues with large number of carriers are effective in reducing the trapping levels at the interface between C 60 thin film surface and the gold electrodes.

本文言語English
ページ(範囲)235-238
ページ数4
ジャーナルChemical Physics Letters
400
1-3
DOI
出版ステータスPublished - 2004 12 11
外部発表はい

ASJC Scopus subject areas

  • 物理化学および理論化学
  • 分光学
  • 原子分子物理学および光学

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