C-axis parallel oriented A1N film resonator fabricated by ion-beam assisted RF magnetron sputtering

Masashi Suzuki*, Takahiko Yanagitani

*この研究の対応する著者

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

c-axis parallel oriented AlN films excite only pure shear wave. These films are suitable for thickness shear mode film resonators and SH-SAW devices. However, c-axis in the wurzite film such as ZnO and AlN tends to grow normal to the substrate. We previously found that c-axis parallel orientation is induced by ion-beam irradiation during deposition in ZnO films. In this study, we investigated the orientation control of AlN films by using ion-beam assisted RF magnetron sputtering. c-axis parallel oriented AlN films were obtained in the sample deposited under 3 kV accelerated ion beam irradiation The direction of c-axis corresponded to the ion beam direction. c-axis parallel AlN film SMR with asymmetric Bragg reflector was then prepared. Pure shear mode was excited in the resonator. Effective k 15′ of the resonator was determined to be 0.052, and TCF was found to be -30.2 ppm/°C.

本文言語English
ホスト出版物のタイトル2011 IEEE International Ultrasonics Symposium, IUS 2011
ページ1230-1233
ページ数4
DOI
出版ステータスPublished - 2011 12月 1
外部発表はい
イベント2011 IEEE International Ultrasonics Symposium, IUS 2011 - Orlando, FL, United States
継続期間: 2011 10月 182011 10月 21

出版物シリーズ

名前IEEE International Ultrasonics Symposium, IUS
ISSN(印刷版)1948-5719
ISSN(電子版)1948-5727

Other

Other2011 IEEE International Ultrasonics Symposium, IUS 2011
国/地域United States
CityOrlando, FL
Period11/10/1811/10/21

ASJC Scopus subject areas

  • 音響学および超音波学

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