Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC

T. Kinoshita, K. M. Itoh, J. Muto, M. Schadt, G. Pensl, K. Takeda

研究成果: Article査読

23 被引用数 (Scopus)

抄録

We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in single crystals of 6H- and 4H-SiC assuming parabolic conduction bands of cigar-shaped constant energy surfaces having three different effective masses in directions perpendicular to each other. Our results agree well with the experimentally determined anisotropic Hall mobility in 6H- and 4H-SiC.

本文言語English
ページ(範囲)295-298
ページ数4
ジャーナルMaterials Science Forum
264-268
PART 1
DOI
出版ステータスPublished - 1998 1 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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