Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz

Kyoya Takano, Kosuke Katayama, Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima, Shinsuke Hara, Akifumi Kasamatsu

研究成果: Conference contribution

2 引用 (Scopus)

抄録

In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.

元の言語English
ホスト出版物のタイトル2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ページ94-96
ページ数3
ISBN(電子版)9781467377942
DOI
出版物ステータスPublished - 2016 1 8
外部発表Yes
イベントIEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Sendai, Japan
継続期間: 2015 8 262015 8 28

Other

OtherIEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015
Japan
Sendai
期間15/8/2615/8/28

Fingerprint

Electromagnetic fields
Electric lines
Calibration

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

これを引用

Takano, K., Katayama, K., Yoshida, T., Amakawa, S., Fujishima, M., Hara, S., & Kasamatsu, A. (2016). Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. : 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings (pp. 94-96). [7377898] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2015.7377898

Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. / Takano, Kyoya; Katayama, Kosuke; Yoshida, Takeshi; Amakawa, Shuhei; Fujishima, Minoru; Hara, Shinsuke; Kasamatsu, Akifumi.

2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. p. 94-96 7377898.

研究成果: Conference contribution

Takano, K, Katayama, K, Yoshida, T, Amakawa, S, Fujishima, M, Hara, S & Kasamatsu, A 2016, Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. : 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings., 7377898, Institute of Electrical and Electronics Engineers Inc., pp. 94-96, IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015, Sendai, Japan, 15/8/26. https://doi.org/10.1109/RFIT.2015.7377898
Takano K, Katayama K, Yoshida T, Amakawa S, Fujishima M, Hara S その他. Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. : 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. p. 94-96. 7377898 https://doi.org/10.1109/RFIT.2015.7377898
Takano, Kyoya ; Katayama, Kosuke ; Yoshida, Takeshi ; Amakawa, Shuhei ; Fujishima, Minoru ; Hara, Shinsuke ; Kasamatsu, Akifumi. / Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 94-96
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