Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz

Kyoya Takano, Kosuke Katayama, Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima, Shinsuke Hara, Akifumi Kasamatsu

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.

本文言語English
ホスト出版物のタイトル2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ94-96
ページ数3
ISBN(電子版)9781467377942
DOI
出版ステータスPublished - 2016 1月 8
外部発表はい
イベントIEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Sendai, Japan
継続期間: 2015 8月 262015 8月 28

出版物シリーズ

名前2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings

Other

OtherIEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015
国/地域Japan
CitySendai
Period15/8/2615/8/28

ASJC Scopus subject areas

  • コンピュータ ネットワークおよび通信
  • 電子工学および電気工学

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