Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy

Hiroshi Ito*, Toshiki Makimoto

*この研究の対応する著者

研究成果: Article査読

10 被引用数 (Scopus)

抄録

This letter investigates carbon doping in AlGaAs using flow-rate modulation epitaxy (FME). The tendency of hole concentration increasing with Al composition is explained by the thermal decomposition of trimethylaluminum molecules on the substrate surface. The highest hole concentration obtained is 3×1020 cm-3 in Al0.4Ga0.6As layers. An AlGaAs/GaAs heterojunction bipolar transistor with an FME-grown compositionally graded carbon-doped base layer was fabricated for the first time. It exhibits a current gain of 25 with 2×1019 cm -3 base doping.

本文言語English
ページ(範囲)2770-2772
ページ数3
ジャーナルApplied Physics Letters
58
24
DOI
出版ステータスPublished - 1991
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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