Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy

Hiroshi Ito; Toshiki Makimoto

doi:10.1063/1.104781

Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy

Hiroshi Ito^*, Toshiki Makimoto

^*この研究の対応する著者

研究成果: Article › 査読

10 被引用数 (Scopus)

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This letter investigates carbon doping in AlGaAs using flow-rate modulation epitaxy (FME). The tendency of hole concentration increasing with Al composition is explained by the thermal decomposition of trimethylaluminum molecules on the substrate surface. The highest hole concentration obtained is 3×10²⁰ cm^-3 in Al_0.4Ga_0.6As layers. An AlGaAs/GaAs heterojunction bipolar transistor with an FME-grown compositionally graded carbon-doped base layer was fabricated for the first time. It exhibits a current gain of 25 with 2×10¹⁹ cm ^-3 base doping.

本文言語	English
ページ（範囲）	2770-2772
ページ数	3
ジャーナル	Applied Physics Letters
巻	58
号	24
DOI	https://doi.org/10.1063/1.104781
出版ステータス	Published - 1991
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.104781

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title = "Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy",

abstract = "This letter investigates carbon doping in AlGaAs using flow-rate modulation epitaxy (FME). The tendency of hole concentration increasing with Al composition is explained by the thermal decomposition of trimethylaluminum molecules on the substrate surface. The highest hole concentration obtained is 3×1020 cm-3 in Al0.4Ga0.6As layers. An AlGaAs/GaAs heterojunction bipolar transistor with an FME-grown compositionally graded carbon-doped base layer was fabricated for the first time. It exhibits a current gain of 25 with 2×1019 cm -3 base doping.",

author = "Hiroshi Ito and Toshiki Makimoto",

year = "1991",

doi = "10.1063/1.104781",

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journal = "Applied Physics Letters",

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AU - Makimoto, Toshiki

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N2 - This letter investigates carbon doping in AlGaAs using flow-rate modulation epitaxy (FME). The tendency of hole concentration increasing with Al composition is explained by the thermal decomposition of trimethylaluminum molecules on the substrate surface. The highest hole concentration obtained is 3×1020 cm-3 in Al0.4Ga0.6As layers. An AlGaAs/GaAs heterojunction bipolar transistor with an FME-grown compositionally graded carbon-doped base layer was fabricated for the first time. It exhibits a current gain of 25 with 2×1019 cm -3 base doping.

AB - This letter investigates carbon doping in AlGaAs using flow-rate modulation epitaxy (FME). The tendency of hole concentration increasing with Al composition is explained by the thermal decomposition of trimethylaluminum molecules on the substrate surface. The highest hole concentration obtained is 3×1020 cm-3 in Al0.4Ga0.6As layers. An AlGaAs/GaAs heterojunction bipolar transistor with an FME-grown compositionally graded carbon-doped base layer was fabricated for the first time. It exhibits a current gain of 25 with 2×1019 cm -3 base doping.

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JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -

Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy

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