Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs

Naoki Kobayashi, Toshiki Makimoto

研究成果: Article

6 引用 (Scopus)

抄録

By an in-situ surface photo-absorption study of the ALE process and carbon atomic layer doping, an other than the so far proposed carbon incorporation mechanism via formation of a CH2 bridge bond has been found, i.e. carbon incorporation via an exchange reaction between dissociated CH3 radicals from TMG and As atoms of the surface onto which TMG is deposited. We also propose a method for reducing the carbon incorporation by thermal desorption of the CH3 groups.

元の言語English
ページ(範囲)284-289
ページ数6
ジャーナルApplied Surface Science
82-83
発行部数C
DOI
出版物ステータスPublished - 1994 12 2
外部発表Yes

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Atomic layer epitaxy
atomic layer epitaxy
aluminum gallium arsenides
Carbon
carbon
Thermal desorption
photoabsorption
desorption
Doping (additives)
Atoms
gallium arsenide
atoms

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

これを引用

Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs. / Kobayashi, Naoki; Makimoto, Toshiki.

:: Applied Surface Science, 巻 82-83, 番号 C, 02.12.1994, p. 284-289.

研究成果: Article

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