Carbon modulation-doped P-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor Deposition

Toshiki Makimoto*, Shi Shya Chang

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Carbon atoms are used as a p-type dopant for modulation-doped p-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition. Carbon impurities are effectively doped into AlGaAs layers by flow-rate modulation epitaxy, which is a modified method of metalorganic chemical vapor deposition. A mobility of 6.0×104 cm2/V·s is obtained at 13 K for a sheet carrier concentration of 4.1×1011 cm-2, indicating that a high quality two-dimensional hole gas is realized by abrupt heterointerfaces and sharp carbon doping profiles.

本文言語English
ページ(範囲)L797-L798
ジャーナルJapanese journal of applied physics
31
6
DOI
出版ステータスPublished - 1992 6
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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