Carbon modulation-doped P-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor Deposition

Toshiki Makimoto, Shi Shya Chang

研究成果: Article

1 引用 (Scopus)

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Carbon atoms are used as a p-type dopant for modulation-doped p-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition. Carbon impurities are effectively doped into AlGaAs layers by flow-rate modulation epitaxy, which is a modified method of metalorganic chemical vapor deposition. A mobility of 6.0×104 cm2/V·s is obtained at 13 K for a sheet carrier concentration of 4.1×1011 cm-2, indicating that a high quality two-dimensional hole gas is realized by abrupt heterointerfaces and sharp carbon doping profiles.

元の言語English
ページ(範囲)L797-L798
ジャーナルJapanese journal of applied physics
31
発行部数6
DOI
出版物ステータスPublished - 1992 6
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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