抄録
Carbon atoms are used as a p-type dopant for modulation-doped p-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition. Carbon impurities are effectively doped into AlGaAs layers by flow-rate modulation epitaxy, which is a modified method of metalorganic chemical vapor deposition. A mobility of 6.0×104 cm2/V·s is obtained at 13 K for a sheet carrier concentration of 4.1×1011 cm-2, indicating that a high quality two-dimensional hole gas is realized by abrupt heterointerfaces and sharp carbon doping profiles.
| 本文言語 | English |
|---|---|
| ページ（範囲） | L797-L798 |
| ジャーナル | Japanese journal of applied physics |
| 巻 | 31 |
| 号 | 6 |
| DOI | |
| 出版ステータス | Published - 1992 6月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）