Carrier densities of Sn-doped in 2 O 3 nanoparticles and their effect on X-ray photoelectron emission

Junjun Jia, Ai Takaya, Takehiro Yonezawa, Kazuhiko Yamasaki, Hiromi Nakazawa, Yuzo Shigesato

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Sn-doped In 2 O 3 (ITO) nanoparticles with various Sn doping concentrations were successfully fabricated using a liquid phase coprecipitation method. Similar to sputtered ITO thin films, Sn doping reaches a maximum carrier density (1.52 × 10 21 cm - 3) at 10 at. % in ITO nanoparticles, which was estimated from the bulk plasmon energy based on a scanning ellipsometry (SE) simulation. Interestingly, the X-ray photoelectron emission spectra (XPS) of In 3d core levels show a clear asymmetric peak with a shoulder on the high-binding-energy side for degenerated ITO nanoparticles, which may be associated with the influence of the surface plasmon or plasmonic coupling. Our results suggest that combining the SE simulation and XPS measurements effectively provides a new way to understand the difference between bulk plasmons and surface plasmons for transparent conductive oxide nanoparticles.

本文言語English
論文番号245303
ジャーナルJournal of Applied Physics
125
24
DOI
出版ステータスPublished - 2019 6月 28

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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