Nonresonant carrier tunneling dynamics in GaAs/AlGaAs double quantum wells as a function of carrier density was investigated by using time-resolved pump and probe measurements. At low temperatures, tunneling time increases with increasing carrier density. At high temperatures, no dependence of tunneling time on carrier density was shown. This unique behavior is well explained by the thermodynamic effect between excitons and free carriers as a function of carrier density on the tunneling process. At low temperatures, a larger fraction of excitons at a higher carrier density, which have a relatively slow tunneling time in contrast to free electrons, leads to a slow tunneling time. The independence of the tunneling time at high temperatures is attributed to the insensitivity of the exciton population to the increased carrier density.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||Published - 2008 6 30|
|イベント||15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan|
継続期間: 2007 7 23 → 2007 7 27
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