Carrier density dependence of nonresonant carrier tunneling in GaAs double quantum wells - Effect of exciton and free carrier thermodynamic

S. L. Lu, T. Ushiyama, A. Tackeuchi, S. Muto

研究成果査読

抄録

Nonresonant carrier tunneling dynamics in GaAs/AlGaAs double quantum wells as a function of carrier density was investigated by using time-resolved pump and probe measurements. At low temperatures, tunneling time increases with increasing carrier density. At high temperatures, no dependence of tunneling time on carrier density was shown. This unique behavior is well explained by the thermodynamic effect between excitons and free carriers as a function of carrier density on the tunneling process. At low temperatures, a larger fraction of excitons at a higher carrier density, which have a relatively slow tunneling time in contrast to free electrons, leads to a slow tunneling time. The independence of the tunneling time at high temperatures is attributed to the insensitivity of the exciton population to the increased carrier density.

本文言語English
ページ(範囲)78-81
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
5
1
DOI
出版ステータスPublished - 2008 6 30
イベント15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan
継続期間: 2007 7 232007 7 27

ASJC Scopus subject areas

  • 凝縮系物理学

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