TY - JOUR
T1 - Carrier density dependence of nonresonant carrier tunneling in GaAs double quantum wells - Effect of exciton and free carrier thermodynamic
AU - Lu, S. L.
AU - Ushiyama, T.
AU - Tackeuchi, A.
AU - Muto, S.
PY - 2008
Y1 - 2008
N2 - Nonresonant carrier tunneling dynamics in GaAs/AlGaAs double quantum wells as a function of carrier density was investigated by using time-resolved pump and probe measurements. At low temperatures, tunneling time increases with increasing carrier density. At high temperatures, no dependence of tunneling time on carrier density was shown. This unique behavior is well explained by the thermodynamic effect between excitons and free carriers as a function of carrier density on the tunneling process. At low temperatures, a larger fraction of excitons at a higher carrier density, which have a relatively slow tunneling time in contrast to free electrons, leads to a slow tunneling time. The independence of the tunneling time at high temperatures is attributed to the insensitivity of the exciton population to the increased carrier density.
AB - Nonresonant carrier tunneling dynamics in GaAs/AlGaAs double quantum wells as a function of carrier density was investigated by using time-resolved pump and probe measurements. At low temperatures, tunneling time increases with increasing carrier density. At high temperatures, no dependence of tunneling time on carrier density was shown. This unique behavior is well explained by the thermodynamic effect between excitons and free carriers as a function of carrier density on the tunneling process. At low temperatures, a larger fraction of excitons at a higher carrier density, which have a relatively slow tunneling time in contrast to free electrons, leads to a slow tunneling time. The independence of the tunneling time at high temperatures is attributed to the insensitivity of the exciton population to the increased carrier density.
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U2 - 10.1002/pssc.200776579
DO - 10.1002/pssc.200776579
M3 - Conference article
AN - SCOPUS:45749130524
VL - 5
SP - 78
EP - 81
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 1
T2 - 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15
Y2 - 23 July 2007 through 27 July 2007
ER -