@article{8f99b48cc24f4131a0dda0301b07e2ea,
title = "Carrier dynamics of quantum confined structures",
abstract = "This article reviews aspects of carrier dynamics concerning semiconductor quantum wells in picosecond and femtosecond regime with emphasis on tunneling and spin relaxation which we were experimentally involved in. We refer to recent significant developments in the field. We also pick up intriguing aspects of quantum dots on possible applications to both electronic and photonic devices related to the carrier dynamics.",
keywords = "Devices, Femtosecond, Picosecond, Quantum confinement, Quantum dot, Quantum well, Semiconductor",
author = "Shunichi Muto and Atsushi Tackeuchi",
note = "Funding Information: Most of the work described was done when authors worked at Fujitsu Laboratories. However, the work concerning spin relaxation in InGaAs was done in the frame of Femtosecond Technology Project supported by NEDO. Also, the work concerning ME-RHET was performed under the management of FED as a part of the MITI R&D program (Quantum Functional Devices Project) supported by NEDO.",
year = "1998",
month = apr,
day = "1",
doi = "10.1016/S0927-796X(97)00022-3",
language = "English",
volume = "22",
pages = "79--111",
journal = "Materials Science and Engineering: R: Reports",
issn = "0927-796X",
publisher = "Elsevier BV",
number = "3",
}