Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells

Lian Ji, Shulong Lu, Yuanyuan Wu, Pai Dai, Lifeng Bian, Masayuki Arimochi, Tomomasa Watanabe, Naohiro Asaka, Mitsunori Uemura, Atsushi Tackeuchi, Shiro Uchida, Hui Yang

研究成果: Article

22 引用 (Scopus)

抜粋

The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.

元の言語English
ページ(範囲)1-5
ページ数5
ジャーナルSolar Energy Materials and Solar Cells
127
DOI
出版物ステータスPublished - 2014 8

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

これを引用

Ji, L., Lu, S., Wu, Y., Dai, P., Bian, L., Arimochi, M., Watanabe, T., Asaka, N., Uemura, M., Tackeuchi, A., Uchida, S., & Yang, H. (2014). Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells. Solar Energy Materials and Solar Cells, 127, 1-5. https://doi.org/10.1016/j.solmat.2014.03.051