Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

T. Asami*, H. Nosho, L. H. Li, J. C. Harmand, S. L. Lu, A. Tackeuchi

*この研究の対応する著者

研究成果: Conference contribution

抄録

We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn 0.36N 0.006AsSb 0.015 well, 5-nm-thick GaN 0.01AsSb 0.11 intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
ページ665-666
ページ数2
DOI
出版ステータスPublished - 2011
イベント30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
継続期間: 2010 7月 252010 7月 30

出版物シリーズ

名前AIP Conference Proceedings
1399
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
国/地域Korea, Republic of
CitySeoul
Period10/7/2510/7/30

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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