Catheter-tip capacitive pressure sensor

Masayoshi Esashi, Shuichi Shoji, Yosinori Matsumoto, Kazuyoshi Furuta

研究成果: Article

5 引用 (Scopus)

抄録

As a pressure sensor to be used at the tip of a catheter, a capacitive relative pressure sensor was fabricated. This paper describes the fabrication process and the characteristics of this pressure sensor. The size of the sensor fabricated is 0.7 × 3.5 × 0.8 mm3 and the spacing between the capacitor electrodes is either 1.0 μm or 1.5 μm. The principal features are as follows: (1) In the fabrication of the diaphragm, high-concentration boron was diffused into an Si wafer. The diaphragm thickness was controlled accurately by etch stop; (2) to reduce the effect of the stray capacitance and to increase the S/N ratio of the sensor, the capacitance detection IC was placed near the diaphragm; (3) since the consumption current flows at the oscillation frequency, it is possible to use two lead wires from the sensor; and (4) this IC has a size of 1.2 × 0.5 mm2 and the temperature dependence of the oscillation frequency can be made zero by letting the power supply voltage be 2.24 V. The pressure sensitivity of the obtained sensor is 3.45 × 10-5/mmHg and the temperature coefficient at the zero pressure was 0.17 mmHg/°C. The output of the IC placed by the sensor had a frequency change of about 7 kHz for 1000 mmHg.

元の言語English
ページ(範囲)79-87
ページ数9
ジャーナルElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
73
発行部数10
出版物ステータスPublished - 1990 10
外部発表Yes

Fingerprint

Capacitive sensors
Catheters
Pressure sensors
pressure sensors
diaphragms
Diaphragms
sensors
Sensors
Capacitance
capacitance
Fabrication
oscillations
fabrication
power supplies
Boron
capacitors
boron
Capacitors
spacing
wafers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Catheter-tip capacitive pressure sensor. / Esashi, Masayoshi; Shoji, Shuichi; Matsumoto, Yosinori; Furuta, Kazuyoshi.

:: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 巻 73, 番号 10, 10.1990, p. 79-87.

研究成果: Article

@article{e61d6f49855d4e7c815f91e4fd0eb7f8,
title = "Catheter-tip capacitive pressure sensor",
abstract = "As a pressure sensor to be used at the tip of a catheter, a capacitive relative pressure sensor was fabricated. This paper describes the fabrication process and the characteristics of this pressure sensor. The size of the sensor fabricated is 0.7 × 3.5 × 0.8 mm3 and the spacing between the capacitor electrodes is either 1.0 μm or 1.5 μm. The principal features are as follows: (1) In the fabrication of the diaphragm, high-concentration boron was diffused into an Si wafer. The diaphragm thickness was controlled accurately by etch stop; (2) to reduce the effect of the stray capacitance and to increase the S/N ratio of the sensor, the capacitance detection IC was placed near the diaphragm; (3) since the consumption current flows at the oscillation frequency, it is possible to use two lead wires from the sensor; and (4) this IC has a size of 1.2 × 0.5 mm2 and the temperature dependence of the oscillation frequency can be made zero by letting the power supply voltage be 2.24 V. The pressure sensitivity of the obtained sensor is 3.45 × 10-5/mmHg and the temperature coefficient at the zero pressure was 0.17 mmHg/°C. The output of the IC placed by the sensor had a frequency change of about 7 kHz for 1000 mmHg.",
author = "Masayoshi Esashi and Shuichi Shoji and Yosinori Matsumoto and Kazuyoshi Furuta",
year = "1990",
month = "10",
language = "English",
volume = "73",
pages = "79--87",
journal = "Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)",
issn = "8756-663X",
publisher = "Scripta Technica",
number = "10",

}

TY - JOUR

T1 - Catheter-tip capacitive pressure sensor

AU - Esashi, Masayoshi

AU - Shoji, Shuichi

AU - Matsumoto, Yosinori

AU - Furuta, Kazuyoshi

PY - 1990/10

Y1 - 1990/10

N2 - As a pressure sensor to be used at the tip of a catheter, a capacitive relative pressure sensor was fabricated. This paper describes the fabrication process and the characteristics of this pressure sensor. The size of the sensor fabricated is 0.7 × 3.5 × 0.8 mm3 and the spacing between the capacitor electrodes is either 1.0 μm or 1.5 μm. The principal features are as follows: (1) In the fabrication of the diaphragm, high-concentration boron was diffused into an Si wafer. The diaphragm thickness was controlled accurately by etch stop; (2) to reduce the effect of the stray capacitance and to increase the S/N ratio of the sensor, the capacitance detection IC was placed near the diaphragm; (3) since the consumption current flows at the oscillation frequency, it is possible to use two lead wires from the sensor; and (4) this IC has a size of 1.2 × 0.5 mm2 and the temperature dependence of the oscillation frequency can be made zero by letting the power supply voltage be 2.24 V. The pressure sensitivity of the obtained sensor is 3.45 × 10-5/mmHg and the temperature coefficient at the zero pressure was 0.17 mmHg/°C. The output of the IC placed by the sensor had a frequency change of about 7 kHz for 1000 mmHg.

AB - As a pressure sensor to be used at the tip of a catheter, a capacitive relative pressure sensor was fabricated. This paper describes the fabrication process and the characteristics of this pressure sensor. The size of the sensor fabricated is 0.7 × 3.5 × 0.8 mm3 and the spacing between the capacitor electrodes is either 1.0 μm or 1.5 μm. The principal features are as follows: (1) In the fabrication of the diaphragm, high-concentration boron was diffused into an Si wafer. The diaphragm thickness was controlled accurately by etch stop; (2) to reduce the effect of the stray capacitance and to increase the S/N ratio of the sensor, the capacitance detection IC was placed near the diaphragm; (3) since the consumption current flows at the oscillation frequency, it is possible to use two lead wires from the sensor; and (4) this IC has a size of 1.2 × 0.5 mm2 and the temperature dependence of the oscillation frequency can be made zero by letting the power supply voltage be 2.24 V. The pressure sensitivity of the obtained sensor is 3.45 × 10-5/mmHg and the temperature coefficient at the zero pressure was 0.17 mmHg/°C. The output of the IC placed by the sensor had a frequency change of about 7 kHz for 1000 mmHg.

UR - http://www.scopus.com/inward/record.url?scp=0025503568&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025503568&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0025503568

VL - 73

SP - 79

EP - 87

JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

SN - 8756-663X

IS - 10

ER -