Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD

Yoshihiro Yokota*, Hiroshi Kawarada, Jing Sheng Ma, Kazuhito Nishimura, Akio Hiraki

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Boron-doped p-type semiconducting diamond formed by plasma-assisted chemical vapor deposition (CVD) shows the same blue cathodoluminescence (CL), having a peak at 2.8-2.9 eV, as that of natiural semiconducting diamond classified as type IIb. In natural type IIb diamond (semiconducting) and in natural type IIa diamond (insulating), dislocations are luminescent regions. In single crystal polyhedrons of CVD diamond it has been observed that the luminescent regions are located at {100} growth sectors, but few are found at {111} sectors. This feature can be explained by the difference in the introduction of crystal defects between the {100} and {111} sectors. This phenomenon in CVD diamond has been discussed in comparison with natural type IIb diamond.

本文言語English
ページ(範囲)65-70
ページ数6
ジャーナルJournal of Crystal Growth
103
1-4
DOI
出版ステータスPublished - 1990 6月 2
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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