Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films

K. Tanabe*, K. Nakazawa, J. Susantyo, H. Kawarada, S. Koizumi


研究成果: Article査読

9 被引用数 (Scopus)


A homoepitaxial diamond film with a thickness of approximately 1 μm was grown on the (111) surface of a type Ib diamond substrate with dopant concentration (PH3/CH4) of 500 ppm. Bound exciton recombination radiation due to the neutral donors has been observed in the peaks at 5.18 and 5.32 eV. The dominant peak at 5.18 eV is associated with one TO phonon. The peak at 5.32 eV is the radiation without phonon emission due to the localization of donors. This appearance of non-phonon emission is one of the important evidences to prove the two peaks at 5.18 and 5.32 eV to be the recombination radiation of bound exciton due to the donor. The binding energy of the free exciton to the donors, which is deduced from the energy difference between free and bound exciton, is 90 meV.

ジャーナルDiamond and Related Materials
出版ステータスPublished - 2001 9月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学


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