TY - JOUR
T1 - Cause of the 5.0 ev absorption band in pure silica glass
AU - Tohmon, Ryoichi
AU - Yamasaka, Yoshiya
AU - Nagasawa, Kaya
AU - Ohki, Yoshimichi
AU - Hama, Yoshimasa
PY - 1987/12/1
Y1 - 1987/12/1
N2 - The optical absorption band at 5.0 eV (the 'B2 band') is classified into two types (B2α: and B2β), each having different photoluminescence peak, half width, and decreasing characteristic by heat treatment. The 7.6 eV absorption band is found in samples with the B2α band. The 7.6 eV and the B2α bands are caused by the same oxygen vacancy in the form of {triple bond, long}Si-Si{triple bond, long}. The former band is due to a singlet-to-singlet transition, while the latter to a singlet-totriplet transition.
AB - The optical absorption band at 5.0 eV (the 'B2 band') is classified into two types (B2α: and B2β), each having different photoluminescence peak, half width, and decreasing characteristic by heat treatment. The 7.6 eV absorption band is found in samples with the B2α band. The 7.6 eV and the B2α bands are caused by the same oxygen vacancy in the form of {triple bond, long}Si-Si{triple bond, long}. The former band is due to a singlet-to-singlet transition, while the latter to a singlet-totriplet transition.
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U2 - 10.1016/S0022-3093(87)80667-1
DO - 10.1016/S0022-3093(87)80667-1
M3 - Article
AN - SCOPUS:33746737657
SN - 0022-3093
VL - 95-96
SP - 671
EP - 678
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 2
ER -