When we implanted P+ or B+ ions into yttria-stabilized zirconia (YSZ), its crystallinity was degraded. Concurrently, the photoluminescence at around 2.8 eV originating from two types of oxygen vacancies with one or two captured electrons became weak, indicating a decrease in the number of oxygen vacancies. Oxygen vacancies appear in YSZ as a result of the replacement of Zr4+ by Y3+ in ZrO2. Therefore, it seems that the separation of YSZ into ZrO2 and Y2O3 induced by the ion implantation is responsible for the decrease in the number of oxygen vacancies. Moreover, the intensity of the 2.8 eV photoluminescence returns to the value before the ion implantation if the sample is annealed thermally after the implantation at temperatures higher than the crystallization temperature of YSZ. The reaction opposite to the above seems to be induced by the thermal annealing.
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