CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices

G. F. Lorusso, N. Collaert, R. Rooyackers, M. Ercken, I. Pollentier, S. Cheng, B. Degroote, M. Jurczak, S. Biesemans, O. Richard, H. Bender, A. Azordegan, R. Kuppa, S. Shirke, J. Prochazka, Timothy Edward Long

研究成果: Conference article

抜粋

We describe a procedure to calibrate CDSEM to TEM for accuracy. This goal is achieved by using 4 CD reference standards in the range 10-70nm. After calibration, the CD SEM demonstrated sensitivity to process variation down to 10nm. The accuracy of the CD SEM measurements on fins of MuGFET devices was confirmed by TEM analysis.

元の言語English
記事番号PE223
ページ(範囲)169-172
ページ数4
ジャーナルIEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
出版物ステータスPublished - 2005 12 15
外部発表Yes
イベントIEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings - San Jose, CA, United States
継続期間: 2005 9 132005 9 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • これを引用

    Lorusso, G. F., Collaert, N., Rooyackers, R., Ercken, M., Pollentier, I., Cheng, S., Degroote, B., Jurczak, M., Biesemans, S., Richard, O., Bender, H., Azordegan, A., Kuppa, R., Shirke, S., Prochazka, J., & Long, T. E. (2005). CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices. IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, 169-172. [PE223].