抄録
We propose a new strategy for in-situ observation of dopant activation process using scanning tunnelling microscopy (STM) technology. Two factor techniques are established within our original STM system combined with liquid-metal-ion-source ion-gun (LMIS-IG/STM): (1) in-situ real-time observation of Si(001)-2×1 surface modified with dopant ions, and (2) in-situ hydrogen passivation of Si(001)-2×1 surface. Sequential STM images of the surface morphological changes are successfully obtained with keeping the original observation area. The hydrogenated Si(001)-2×1 surface is stable enough even under the degraded vacuum conditions which are unavoidable in ion irradiation processes.
本文言語 | English |
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ページ(範囲) | 1418-1422 |
ページ数 | 5 |
ジャーナル | Physica Status Solidi (C) Current Topics in Solid State Physics |
巻 | 9 |
号 | 6 |
DOI | |
出版ステータス | Published - 2012 6月 |
ASJC Scopus subject areas
- 凝縮系物理学