Challenge for STM observation of dopant activation process on Si(001): In-situ ion irradiation and hydrogenation

Takefumi Kamioka; Fumiya Isono; Takahiro Yoshida; Iwao Ohdomari; Takanobu Watanabe

doi:10.1002/pssc.201100684

Challenge for STM observation of dopant activation process on Si(001): In-situ ion irradiation and hydrogenation

Takefumi Kamioka, Fumiya Isono, Takahiro Yoshida, Iwao Ohdomari, Takanobu Watanabe

基幹理工学部

研究成果: Article › 査読

抄録

We propose a new strategy for in-situ observation of dopant activation process using scanning tunnelling microscopy (STM) technology. Two factor techniques are established within our original STM system combined with liquid-metal-ion-source ion-gun (LMIS-IG/STM): (1) in-situ real-time observation of Si(001)-2×1 surface modified with dopant ions, and (2) in-situ hydrogen passivation of Si(001)-2×1 surface. Sequential STM images of the surface morphological changes are successfully obtained with keeping the original observation area. The hydrogenated Si(001)-2×1 surface is stable enough even under the degraded vacuum conditions which are unavoidable in ion irradiation processes.

本文言語	English
ページ（範囲）	1418-1422
ページ数	5
ジャーナル	Physica Status Solidi (C) Current Topics in Solid State Physics
巻	9
号	6
DOI	https://doi.org/10.1002/pssc.201100684
出版ステータス	Published - 2012 6 1

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201100684

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引用スタイル

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T2 - In-situ ion irradiation and hydrogenation

AU - Kamioka, Takefumi

AU - Isono, Fumiya

AU - Yoshida, Takahiro

AU - Ohdomari, Iwao

AU - Watanabe, Takanobu

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KW - Ion implantation

KW - Point defects

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