Change of electronic properties on the doping-induced insulator-metal transition in La1-xSrxVO3

F. Inaba*, T. Arima, T. Ishikawa, T. Katsufuji, Y. Tokura

*この研究の対応する著者

研究成果: Article査読

93 被引用数 (Scopus)

抄録

Changes in electrical, magnetic, and optical properties have been investigated for the doping-induced insulator-metal (I-M) transition in hole-doped Mott insulators, La1-xSrxVO3. In the optical spectra, the I-M transition is characterized by doping-induced transfer of spectral weight into the in-gap region. Resistivity in the metallic phase near the critical magnetic phase boundary shows such a temperature dependence as expressed by the relation =0+AT1.5 over a wide temperature range (2200 K) with the enhanced coefficient A towards the phase boundary. The results are argued in terms of effect of the antiferromagnetic spin fluctuation on the charge transport.

本文言語English
ページ(範囲)R2221-R2224
ジャーナルPhysical Review B
52
4
DOI
出版ステータスPublished - 1995
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学

フィンガープリント

「Change of electronic properties on the doping-induced insulator-metal transition in La1-xSrxVO3」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル