抄録
Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.
本文言語 | English |
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ページ(範囲) | 62-63 |
ページ数 | 2 |
ジャーナル | Digest of Technical Papers - Symposium on VLSI Technology |
出版ステータス | Published - 1996 |
外部発表 | はい |
イベント | Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA 継続期間: 1996 6月 11 → 1996 6月 13 |
ASJC Scopus subject areas
- 電子工学および電気工学