Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

A. Furukawa; Y. Abe; S. Shimizu; T. Kuroi; Y. Tokuda; M. Inuishi

Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

A. Furukawa, Y. Abe, S. Shimizu, T. Kuroi, Y. Tokuda, M. Inuishi

研究成果: Conference article › 査読

抄録

Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

本文言語	English
ページ（範囲）	62-63
ページ数	2
ジャーナル	Digest of Technical Papers - Symposium on VLSI Technology
出版ステータス	Published - 1996 1 1
外部発表	はい
イベント	Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA 継続期間: 1996 6 11 → 1996 6 13

ASJC Scopus subject areas

Electrical and Electronic Engineering

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引用スタイル

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abstract = "Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.",

author = "A. Furukawa and Y. Abe and S. Shimizu and T. Kuroi and Y. Tokuda and M. Inuishi",

year = "1996",

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AU - Furukawa, A.

AU - Abe, Y.

AU - Shimizu, S.

AU - Kuroi, T.

AU - Tokuda, Y.

AU - Inuishi, M.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

AB - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

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JO - Digest of Technical Papers - Symposium on VLSI Technology

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T2 - Proceedings of the 1996 Symposium on VLSI Technology

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