Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

A. Furukawa, Y. Abe, S. Shimizu, T. Kuroi, Y. Tokuda, M. Inuishi

研究成果: Conference article査読

8 被引用数 (Scopus)

抄録

Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

本文言語English
ページ(範囲)62-63
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 1996
外部発表はい
イベントProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 1996 6 111996 6 13

ASJC Scopus subject areas

  • 電子工学および電気工学

フィンガープリント

「Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル