Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

A. Furukawa; Y. Abe; S. Shimizu; T. Kuroi; Y. Tokuda; M. Inuishi

Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

A. Furukawa, Y. Abe, S. Shimizu, T. Kuroi, Y. Tokuda, M. Inuishi

研究成果: Conference article › 査読

抄録

Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

本文言語	English
ページ（範囲）	62-63
ページ数	2
ジャーナル	Digest of Technical Papers - Symposium on VLSI Technology
出版ステータス	Published - 1996
外部発表	はい
イベント	Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA 継続期間: 1996 6 11 → 1996 6 13

ASJC Scopus subject areas

電子工学および電気工学

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引用スタイル

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title = "Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation",

abstract = "Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.",

author = "A. Furukawa and Y. Abe and S. Shimizu and T. Kuroi and Y. Tokuda and M. Inuishi",

year = "1996",

language = "English",

pages = "62--63",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 Symposium on VLSI Technology ; Conference date: 11-06-1996 Through 13-06-1996",

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TY - JOUR

T1 - Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

AU - Furukawa, A.

AU - Abe, Y.

AU - Shimizu, S.

AU - Kuroi, T.

AU - Tokuda, Y.

AU - Inuishi, M.

PY - 1996

Y1 - 1996

N2 - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

AB - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

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M3 - Conference article

AN - SCOPUS:0029715130

SP - 62

EP - 63

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

T2 - Proceedings of the 1996 Symposium on VLSI Technology

Y2 - 11 June 1996 through 13 June 1996

ER -

Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

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