Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement

K. Hirama*, H. Takayanagi, S. Yamauchi, J. H. Yang, H. Umezawa, H. Kawarada

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

In this work, the channel mobility (μch) of diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with hole accumulation layer channels was evaluated from the gate-to-channel capacitance and drain conductance for the first time. The FET structure was utilized for the capacitance-voltage (C-V) measurement, and the gate-to-channel capacitance (CGC) under the forward bias condition was proportional to the gate area, as in the case of Si MOSFETs. For the accurate evaluation of the drain conductance, diamond MOSFETs were fabricated on IIa-type diamond films with low boron concentrations (< 1014cm- 3). In a 60-μm gate-length diamond MOSFET, a μch of 145cm2/Vs was obtained, which is comparable to that of a SiC inversion layer.

本文言語English
ページ(範囲)1256-1258
ページ数3
ジャーナルDiamond and Related Materials
17
7-10
DOI
出版ステータスPublished - 2008 7月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

フィンガープリント

「Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル