TY - JOUR
T1 - Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate
AU - Akahane, Kouichi
AU - Umezawa, Toshimasa
AU - Matsumoto, Atsushi
AU - Yamamoto, Naokatsu
AU - Kawanishi, Tetsuya
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/4
Y1 - 2016/4
N2 - We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576nm in the pulsed mode with a high characteristic temperature of 111K at around room temperature (20-80 °C).
AB - We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576nm in the pulsed mode with a high characteristic temperature of 111K at around room temperature (20-80 °C).
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U2 - 10.7567/JJAP.55.04EJ16
DO - 10.7567/JJAP.55.04EJ16
M3 - Article
AN - SCOPUS:84963641774
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 04EJ16
ER -