Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

研究成果: Conference contribution

4 引用 (Scopus)

抜粋

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113K.

元の言語English
ホスト出版物のタイトルIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
ページ73-74
ページ数2
DOI
出版物ステータスPublished - 2009 10 2
外部発表Yes
イベントIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
継続期間: 2009 5 102009 5 14

出版物シリーズ

名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(印刷物)1092-8669

Other

OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
United States
Newport Beach, CA
期間09/5/1009/5/14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • これを引用

    Akahane, K., Yamamoto, N., & Kawanishi, T. (2009). Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate. : IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 (pp. 73-74). [5012424] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2009.5012424