Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination

Yoshifumi Takanashi*, Kiyoto Takahata, Yoshifumi Muramoto

*この研究の対応する著者

研究成果: Article査読

31 被引用数 (Scopus)

抄録

The current-voltage (I-V) characteristics of In-AlAs/InGaAs high electron mobility transistor (HEMT's) under illumination are investigated. The change of the drain current caused by the illumination can be explained by using the photovoltaic effect so that the excess holes photo-generated in the InGaAs channel layer accumulate at the source-electrode region and cause an effective decrease in the potential barrier for electrons between the source and the channel. The basic equations describing this phenomenon are derived on the basis of the experimental results. In addition, our experimental results are shown to support the barrier-induced hole pile-up model in which holes generated by the impact ionization accumulate in the InAlAs barrier on the source side and cause the kink effect in InAlAs/InGaAs HEMT's.

本文言語English
ページ(範囲)472-474
ページ数3
ジャーナルIEEE Electron Device Letters
19
12
DOI
出版ステータスPublished - 1998 12月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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