The effect of channel width on the characteristics of polvsilicon thin-film transistors (TFT) was investigated. n-channel TFT’s with a channel length L of 20 μm and a channel width W ranging from 20 to 0.5 pm were fabricated and characterized. The most prominent effect of reducing the TFT channel was a drastic decrease in threshold voltage when W was reduced to less than 5 pm. This decrease was found to be correlated with the decrease in grain-boundary trap density.
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